The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 1999

Filed:

Oct. 01, 1997
Applicant:
Inventors:

Yukio Nakamura, Tokyo, JP;

Mitsuhiko Ogihara, Tokyo, JP;

Masumi Taninaka, Tokyo, JP;

Takao Kusano, Tokyo, JP;

Masumi Koizumi, Tokyo, JP;

Hiroyuki Fujiwara, Tokyo, JP;

Makoto Ishimaru, Tokyo, JP;

Masaharu Nobori, Tokyo, JP;

Tsutomu Nomoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 88 ; 257 96 ; 257 97 ;
Abstract

An end facet light emitting type LED has a slanted light emitting side wall relative to a substrate surface. A method for manufacturing end facet light emitting type light emitting devices prevents the pn-junction regions of the devices from being damaged while a semiconductor wafer is diced to separate light emitting devices from one another. A recess is formed on the semiconductor wafer having a depth which is deeper than the pn-junction. A portion to be cut during dicing of the wafer is vertically and horizontally separated from the pn-junction regions, so that if cracks occur when the wafer is diced, the cracks do not affect the light emitting characteristics of the devices.


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