The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1999
Filed:
Jan. 28, 1997
Applicant:
Inventors:
Albert A Burk, Jr, Murrysville, PA (US);
Linard M Thomas, Saltsburg, PA (US);
Assignee:
Northrop Grumman Corporation, Los Angeles, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118715 ; 118725 ;
Abstract
A ceiling arrangement for a high temperature epitaxial growth reactor in which silicon carbide epitaxial layers may be grown. The ceiling includes an upper layer of carbon foam and a lower layer of graphite bonded thereto. A support structure for the ceiling is coupled to a nozzle assembly, holding a gas delivering nozzle. The support structure has a lower flange portion which includes an upwardly extending projection defining a knife edge upon which the ceiling rests. The arrangement minimizes unwanted heat transfer from the ceiling to the nozzle assembly and nozzle.