The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1999
Filed:
Sep. 15, 1997
Sahng Kyoo Lee, Kyoungki-do, KR;
Sang Kyun Park, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Ichon-Shi, KR;
Abstract
A method for fabricating silicon-on-insulator (SOI) wafers which is capable of simplifying the fabrication process while improving the productivity of SOI wafers. In accordance with this method, a first wafer formed with a thermal oxide film is bonded to a second wafer formed with an oxygen ion-implanted region and a hydrogen ion-implanted region. The bonded wafer structure is annealed and then cut along the hydrogen ion-implanted region, so that it is divided into two wafer structures. The wafer structure including the first wafer is annealed to obtain a strengthened chemical coupling property. The wafer structure including the second wafer is annealed to oxidize the oxygen ion-implanted region of the second wafer, thereby forming an oxide film in the second wafer. The first and second wafers are then planarized, thereby forming a pair of SOI wafers.