The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1999
Filed:
Oct. 10, 1996
Applicant:
Inventor:
Jong-Moon Choi, Seoul, KR;
Assignee:
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438396 ; 438253 ;
Abstract
A method of forming a capacitor for a semiconductor memory device, includes the steps of forming first and second insulating layers to form a first contact hole on a substrate, forming a first conductive layer and a third insulating layer within the first contact hole so as to define a second contact hole, forming a second conductive layer within the second contact hole, removing the second and third insulating layers to form a storage electrode, and forming a dielectric layer and a third conductive layer on the storage electrode to form a capacitor.