The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1999
Filed:
May. 08, 1998
Applicant:
Inventor:
Jae Gyung Ahn, Chungcheongbuk-do, KR;
Assignee:
LG Semicon Co., Ltd., Cheongju, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438305 ; 438 96 ; 438264 ; 438303 ; 438529 ;
Abstract
A method of fabricating an MOS device that includes self-aligned suicides, the method including two amorphization implantations, both of which follow formation of the self-aligned source/drain regions of the device but precede formation of the self-aligned suicides. The first consists of implantation of low-energy heavy ions, preferably of energies 15-20 keV, while the second consists of implantation of more energetic heavy ions, preferably of energies at least 40 keV.