The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1999
Filed:
Aug. 15, 1996
Akihiro Hata, Tenri, JP;
Masahiro Adachi, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A fabrication sequence of a thin film transistor, in which a photoresist film is used as an ion doping mask to shield a portion of an amorphous semiconductor layer larger than a gate electrode formed above in width (gate length). The mask is designed by pre-calculating the accuracy of the alignment and etching, so that the gate electrode overlaps neither the source region nor drain region. Thus, it has become possible to form the gate electrode in such a manner not to overlap the source region or drain region while securing an impurity-free offset region. As a result, the present thin film transistor can reduce the OFF-state current and renders excellent OFF-state characteristics, and therefore, when employed in a liquid crystal display device, the resulting liquid crystal display device can prevent display defects, such as a flicker.