The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1999
Filed:
Jun. 27, 1997
Seiko Epson Corporation, Tokyo, JP;
Abstract
In the formation of a thin-film transistor (620) capable of improving the OFF current characteristic, first, all ions (arrow Ion-1) generated from a mixed gas (doping gas) containing 5% PH.sub.3 with the remainder being H.sub.2 gas are implanted to a polycrystalline silicon film (604) at an approximately 80 keV energy level to achieve a P.sup.+ ion dose in the range from 3.times.10.sup.13 /cm.sup.2 to 1.times.10.sup.14 /cm.sup.2 in the process forming low concentration source-drain areas (602, 603). Next, all ions generated from a doping gas of pure hydrogen (arrow Ion-2) are implanted to the low concentration area (604a) at an approximately 20 keV energy level to achieve an H.sup.+ ion dose from 1.times.10.sup.14 /cm.sup.2 to 1.times.10.sup.15 /cm.sup.2. Then, the impurity is activated by heat treatment of the low concentration area (604a) implanted with impurity for approximately one hour at approximately 300.degree. C. in a nitrogen atmosphere.
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