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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5953580 B1

PDFFull Text
Date of Patent:
Sep. 14, 1999

Filed:

Sep. 08, 1997

Method of manufacturing a vacuum device

Applicant:
Inventors:

Sung Weon Kang, Daejon-Shi, KR;

Jin Ho Lee, Daejon-Shi, KR;

Kyoung Ik Cho, Daejon-Shi, KR;

Hyung Joun Yoo, Daejon-Shi, KR;

Assignee:

Electronics and Telecommunications Research Institute, Taejon, KR;

Attorney:

Cohen, Pontani, Lieberman & Pavane

Primary Examiner:

John F Niebling

Assistant Examiner:

Jonathan Hack

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438 20 ; 445 24 ; 445 50 ;
Abstract

A method of manufacturing a vacuum device utilizing a sputtering process is disclosed. According to the present invention, the vacuum device includes a silicon substrate. An emission electrode having a sharp ended tip is formed by etching the silicon substrate. An insulating layer is formed on the silicon substrate so as to make the entire structure of the emission electrode to be exposed, with the emission electrode being surrounded by the insulating layer. A gate electrode is then formed adjacent to the sharp ended tip of the emission electrode. According to the present invention, it has advantages that the emission electrode is manufactured by forming the silicon pillar using the isotropic etching and anisotropic etching and the gate electrode can be easily formed adjacent to the emission electrode by using the sputtering method after the gate insulating layer is formed. Further, the distance between the emission electrode and the gate electrode may be easily adjusted, and the vacuum device may be operated with the desired voltage by controlling the distance between the emission electrode and the gate electrode of the vacuum device.

Find Patent Forward Citations

Kang, Sung. (1999). Method of manufacturing a vacuum device (U.S. Patent No. 5953580). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5953580

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