The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1999
Filed:
Jul. 29, 1997
Applicant:
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R / ; H01L / ; G01N / ; G21K / ;
U.S. Cl.
CPC ...
438 16 ; 250307 ; 250311 ;
Abstract
A method for testing a contact opening of a semiconductor device includes the steps of: inspecting a wafer using an in-line scanning electron microscope, comparing a contrast difference of contact opening regions displayed on the scanning electron microscope, and determining whether the processes for forming the contact openings have been performed correctly based on results of the comparison step. The test method may be performed after any of a contact photolithography process, contact etching process, or conductive layer etching process.