The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1999
Filed:
Feb. 26, 1998
Jun-Young Jeon, Seoul, KR;
Samsung Electronics, Co., Ltd., Suwon, KR;
Abstract
A substrate voltage generating circuitry for a dynamic random access memory (DRAM) generates the substrate voltage using an intermittently enabled charge pump. The value to which the substrate voltage is regulated is adjusted responsive to the static refresh and dynamic refresh characteristics of the memory cells. The adjustment is made in the portion of the substrate voltage generating circuit used for sensing the substrate potential, using fusible links that can be interrupted or cut with a laser beam. Novel circuitry for sensing the substrate potential, which does not load the substrate so as to dissipate charge placed thereon by the charge pump, is used in preferred substrate voltage generating circuitry.