The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1999
Filed:
Jun. 19, 1997
Shinichi Horiba, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
Semiconductor elements, such as driving MOS transistors, transfer MOS transistors and the like are formed in a element region defined on the surface of a semiconductor substrate. A first interlayer insulation layer is formed on these surfaces. A grounding wiring layer is formed over substantially entire surface of the first interlayer insulation layer. Also, a silicon nitride layer and a second interlayer insulation layer are formed sequentially on the surface of the grounding wiring layer. Then, a first contact hole reaching a gate electrode of the driving MOS transistor is provided at a desired position. Then, a side wall insulation layer of silicon nitride layer is formed only on the side wall surface of the grounding wiring layer facing the contact hole.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile