The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 1999

Filed:

Dec. 21, 1995
Applicant:
Inventors:

Satoshi Murakami, Kawasaki, JP;

Tetsuo Saito, Kawasaki, JP;

Hironori Nishino, Kawasaki, JP;

Yoichiro Sakachi, Kawasaki, JP;

Tohru Okamoto, Kawasaki, JP;

Kenji Maruyama, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257442 ; 257188 ; 257190 ; 257614 ; 257627 ;
Abstract

A semiconductor device having: a support substrate having an upper surface; a HgTe layer formed on the support substrate; and a HgCdTe layer directly formed on the HgTe layer. A semiconductor device of another type having: a support substrate having an exposed upper surface tilted from the (100) plane of a single crystal with a diamond structure by a certain angle, along a direction offset by an angle larger than 0.degree. and smaller than 45.degree. from the �011! direction in the (100) plane; a group III-V compound semiconductor layer formed on the support substrate; and a group II-VI compound semiconductor layer formed on the group III-V compound semiconductor layer.


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