The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1999
Filed:
Aug. 06, 1997
Applicant:
Inventors:
Toshio Higashi, Kawasaki, JP;
Takuya Fujii, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kanagawa, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 18 ; 257 17 ; 257 22 ; 257 94 ; 257103 ;
Abstract
The optical semiconductor device comprises a multiple quantum well structure of an AlGaInAs system material formed on an InP semiconductor substrate. The multiple quantum well structure comprises a barrier layer of a below 1.0 .mu.m of PL wavelength and a below 4.5 nm of film thickness active layer alternately laid one on another. An above 0.5% compressive strain is applied to the active layer. Thus the AlGaInAs/InP system optical semiconductor can have good temperature characteristics.
Higashi, Toshio. (1999). Optical semiconductor device including a multiple quantum well structure (U.S. Patent No. 5952673). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5952673
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile