The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1999
Filed:
Dec. 22, 1997
Makoto Yoshida, Ibaraki, JP;
Takahiro Saida, Ibaraki, JP;
Satoshi Okada, Kanagawa, JP;
Masahiro Akamatsu, Ibaraki, JP;
Kenichi Kondo, Tokyo, JP;
Stanley Electric Co., Ltd., Tokyo, JP;
Abstract
The present invention is an apparatus and method for the fabrication of high quality silicon films by deposition of a silicon vapor onto a substrate. The silicon film fabrication apparatus includes a chamber, a crucible having an anode for melting a silicon metal, an anode for generating a DC arc discharge plasma, a substrate holder facing the crucible, and a heater for heating a substrate arranged in the substrate holder. The apparatus also includes a variable DC power supply, a cathode element including an electrode plate for generating the DC arc discharge plasma, a gas intake pipe penetrating through the electrode plate into the chamber, and an exhaust pipe having a valve facing the gas intake pipe. The silicon film is fabricated by disposing a substrate in a chamber, introducing hydrogen gas into the chamber, generating the DC arc discharge plasma, evaporating the silicon metal in the chamber, and depositing the silicon vapor on the substrate after the vapor passes through the DC arc discharge plasma.