The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1999
Filed:
Oct. 04, 1996
Tsunehiro Hato, Kawasaki, JP;
Chikako Yoshida, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
An impurity supply film made of dielectric oxide material is deposited on the surface of an underlying substrate having a surface layer made of different dielectric oxide material. An impurity absorption film made of the same dielectric oxide material as the surface layer of the underlying substrate is deposited on the impurity supply film. The underlying substrate is heated to replace a fraction of at least one type of constituent atoms other than oxygen atoms in the impurity supply film by a fraction of at least one type of constituent atoms other than oxygen atoms in the surface layer of the underlying substrate and in the impurity absorption film, for the whole thickness of the impurity supply film. A method is provided by which impurities are selectively doped in a dielectric oxide material without leaving an electrical barrier on the surface of the material.