The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1999
Filed:
Aug. 13, 1997
Makoto Ohue, Ikoma, JP;
Shinji Shimada, Kashihara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device in accordance with the present invention, for example, is a thin film transistor provided on a transparent substrate. The semiconductor device made of a polysilicon film is provided with (1) a semiconductor layer having a source region and a drain region and (2) a gate electrode provided on a region between the source region and the drain region of the semiconductor layer via a gate insulating film. The semiconductor device is further provided with an organic insulating film made of a condensation polymer having an imide ring such that the organic insulating film covers the gate electrode, the source region, and the drain region. The organic insulating film is formed by applying an organic insulating material such as polyimide, polyamic acid, and other materials, and thereafter by carrying out a calcining process, thereby reducing a trap density of the polysilicon film constituting the semiconductor layer without lowering the productivity due to low throughput, and realizing a semiconductor device which can be suitably adopted as a thin film transistor constituting a matrix circuit section of an active-matrix type liquid crystal display device.