The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1999
Filed:
Jan. 26, 1999
Ko-Min Chang, Austin, TX (US);
Bruce L Morton, Austin, TX (US);
Clinton C Kuo, Austin, TX (US);
Keith E Witek, Austin, TX (US);
Kent J Cooper, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A memory circuit and method of formation uses a transmission gate (24) as a select gate. The transmission gate (24) contains a transistor (30) which is an N-channel transistor and a transistor (28) which is a P-channel transistor. The transistors (28 and 30) are electrically connected in parallel. The use of the transmission gate (24) as a select gate allows reads and writes to occur to a memory cell storage device (i.e. a capacitor (32), a floating gate (22), etc.) without a significant voltage drop occurring across the transmission gate. In addition, EEPROM technology is more compatible with EPROM/flash technology when using a transmission gate as a select gate within EEPROM devices.