The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1999
Filed:
Jan. 22, 1998
Applicant:
Inventor:
David Bang, Palo Alto, CA (US);
Assignee:
Advanced Micro Devices, Inc., Synnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257758 ; 257522 ;
Abstract
An interconnect structure capable of reducing intralevel capacitance in a damascene metalization process employs entrapped air gaps between metal lines. The structure comprises at least first and second metal regions separated by a dielectric region, an air gap formed at least partially within the dielectric region, a diffusion barrier positioned over the two metal regions covering a portion of the upper surface of the air gap, and an insulating layer positioned over the diffusion barrier sealing the upper surface of the air gap.