The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1999
Filed:
Nov. 10, 1997
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device formed on a semiconductor substrate; includes diffusion layers for source and drain regions formed in a surface portion of the semiconductor substrate. A gate electrode is formed on the semiconductor substrate with an intervening gate insulation film. An interlayer insulation film is formed on the gate electrode, and an interconnection layer is formed on the interlayer insulation film. The gate electrode is formed on at least a portion of the source and drain regions and on a channel region located between the source and drain regions. The gate electrode is electrically connected to the interconnection layer via a contact hole formed in the interlayer insulation film on the gate electrode.