The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 1999
Filed:
Nov. 19, 1998
Anthony Yap Wong, Cupertino, CA (US);
Pericom Semiconductor Corp., San Jose, CA (US);
Abstract
An n-channel bus switch has a transistor gate boosted above the power supply (Vcc) to increase current drive and reduce the channel resistance of the bus switch. No pulse generator is needed. The gate terminal is connected to a boosted node. When the bus switch is turned on, a pullup transistor drives the boosted node from ground to Vcc. The pulse generator is eliminated by using a Schmidt-trigger to sense the voltage of the boosted node. Once the Schmidt-trigger senses that the voltage of the boosted node is near Vcc, the pull-up is turned off. A delay line first drives the gate of the pullup transistor to a threshold below Vcc using an n-channel pullup, and then drives the gate to Vpp using a p-channel pullup. A delay line then drives the back-side of a capacitor from ground to Vcc. This voltage swing is coupled through the capacitor to the boosted node, driving the boosted node about 1.3 volts above Vcc. A small keeper transistor supplies a small current to the boosted node to counteract any leakage. Vpp current drain is reduced by using multiple stages to turn the pullup off.