The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 1999
Filed:
Nov. 06, 1997
David H Robertson, Somerville, MA (US);
Lawrence Singer, Bedford, MA (US);
Analog Devices, Inc., Norwood, MA (US);
Abstract
A circuit that produces a gate drive voltage for a MOS transistor switch includes an input that receives a supply voltage, a regulated voltage generating circuit that produces a regulated voltage, and a voltage storage element. A first switch connects the voltage storage element to sample one of the supply voltage and the regulated voltage during a first of first and second non-overlapping time intervals. The second switch connects the voltage storage element to increase the sampled voltage by another of the supply voltage and the regulated voltage to the gate drive voltage during the second non-overlapping time interval. A third switch connects the voltage storage element to provide the gate drive voltage to the MOS transistor switch during the second non-overlapping time interval. The regulated voltage generating circuit produces the regulated voltage such that a high level of the gate drive voltage exceeds the supply voltage yet is maintained less than a breakdown voltage of the MOS transistor switch.