The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 1999
Filed:
Jan. 31, 1994
Yoshinori Kuno, Kanagawa, JP;
Masahide Hirama, Kanagawa, JP;
Sonu Corporation, Tokyo, JP;
Abstract
A MOS transistor comprising channel stoppers formed of a first polysilicon layer to determine a channel width, and a gate electrode formed of a second polysilicon layer, wherein a bias voltage is applied to the channel stoppers. In a charge detector having a source follower circuit with a drive MOS transistor and a load MOS transistor for converting a transferred signal charge into a signal voltage, the MOS transistor of the invention is used as the drive transistor, and its source output voltage is fed back as a bias voltage to the channel stoppers, thereby minimizing both the DC bias variation in the output voltage of the source follower circuit and the nonuniformity in the conversion efficiency.