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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5944890 B1

PDFFull Text
Date of Patent:
Aug. 31, 1999

Filed:

Mar. 28, 1997

Method of producing single crystals and a seed crystal used in the method

Applicant:
Inventors:

Yasuo Kitou, Okazaki, JP;

Naohiro Sugiyama, Nagoya, JP;

Atsuto Okamoto, Nagoya, JP;

Toshihiko Tani, Nagoya, JP;

Nobuo Kamiya, Nisshin, JP;

Assignee:

Denso Corporation, Kariya, JP;

Attorney:

Pillsbury Madison & Sutro LLP

Primary Examiner:

Felisa Hiteshew

Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117101 ;
Abstract

In a method of producing single crystals on a seed crystal, the seed crystal is covered by a protection layer except for a surface on which the single crystals are to be formed. The protection layer is made of material such as carbon or the like, which is stable in a step of forming the single crystals. As a result, a temperature gradient and mass transfer in the seed crystal can be prevented, whereby quality of the single crystals formed on the seed crystal can be improved.

Find Patent Forward Citations

Kitou, Yasuo. (1999). Method of producing single crystals and a seed crystal used in the method (U.S. Patent No. 5944890). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5944890

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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