The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1999
Filed:
Jul. 03, 1997
Akihiko Ochiai, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
The present invention provides a method for manufacturing a semiconductor device, including a step of forming an opening 1 such as a contact hole and a succeeding heat treatment step such as contact annealing, wherein the heat treatment is performed upon completion of filling the opening with a diffusion-preventing film 9 or the like. The method according to the present invention is free from disadvantages due to diffusion of a diffusible material during a heat treatment step performed after the step of forming an opening even if the method is applied to manufacture of a semiconductor device having a structure in which a diffusible material 2 such as a dielectric material used in a capacitor may diffuse through the opening due to heat during such a heat treatment step.