The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1999
Filed:
Feb. 13, 1996
Applicant:
Inventors:
Hung-Sheng Chen, San Jose, CA (US);
Chih Sieh Teng, San Jose, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438202 ; 438234 ;
Abstract
A fully complementary double-poly BiCMOS process utilizes substantially identical device architectures to form n-channel and p-channel MOS transistors, as well as npn and pnp bipolar transistors. In the double-poly process, the first layer of polysilicon is utilized to form the source and drain of the MOS transistors as well as the base and collector of the bipolar transistors. The second layer of polysilicon is then utilized to form the gate of the MOS transistors as well as the emitter of the bipolar transistors.