The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1999
Filed:
Jun. 05, 1997
Takahiro Kawai, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a semiconductor laser, a first dielectric layer is formed on the front face of a laser diode for producing a compressive stress, and a second dielectric layer is formed on the first dielectric layer for producing a tensile stress for counteracting the compressive stress of the first dielectric layer. The first dielectric layer is formed of a substance such as Al.sub.2 O.sub.3 and the second dielectric layer is formed of a substance such as SiN.sub.x. A high stability into is created between the first dielectric layer and the front face of the laser diode to prevent it from suffering from a castrophic optical damage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile