The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1999
Filed:
May. 29, 1997
Yumi Sanaka, Kanagawa, JP;
Masao Ikeda, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor light emitting device composed of an n-type cladding layer, an n-type guide layer, an active layer, a p-type guide layer, and a p-type cladding layer which are sequentially laminated on a substrate. The p-type guide layer is formed from ZnSSe mixed crystal doped with nitrogen. That side of the p-type guide layer which is adjacent to the p-type cladding layer is a p-type semiconductor region in which the concentration of nitrogen is 2.times.10.sup.17 cm.sup.-3, and that side adjacent to the active layer is an intrinsic semiconductor region. The p-type cladding layer is formed from ZnMgSSe mixed crystal doped with nitrogen. That side of the p-type cladding layer which is adjacent to the p-type guide layer is the low-concentration region in which the concentration of nitrogen is 1.times.10.sup.17 cm.sup.-3 which is lower than the concentration at which the rate of activation begins to decrease. The opposite side is the high-concentration region in which the concentration of nitrogen os 2.times.10.sup.17 cm.sup.-3 which is lower than the seturated concentration. The semiconductor light emitting device has a prolonged life owing to the adequate concentration of p-type impurity in the p-type cladding layer.