The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 1999

Filed:

Mar. 17, 1997
Applicant:
Inventors:

Myoung-seob Shim, Kyungki-do, KR;

Hun-chul Shin, Seoul, KR;

Kyung-seok Oh, Kyungki-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257774 ; 438637 ; 438638 ; 438639 ;
Abstract

A method for forming an opening in an integrated circuit device with an improved aspect ratio includes the following steps. An inter-insulating layer is formed on a surface of a substrate. A recess having a first width is then formed in the inter-insulating layer. Next, a hole having a second width is formed in the inter-insulating layer at a base of the recess, wherein the first width is greater than the second width. Thus, an opening is formed to have a cross-sectional shape of a step where its upper portion formed by the recess which is wider than its lower portion formed by the hole. Accordingly, open circuits caused by voids formed in the opening in subsequent metal deposition steps may be prevented.


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