The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1999
Filed:
May. 04, 1998
Applicant:
Inventor:
Yosuke Miyoshi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257636 ; 257195 ; 257200 ; 257629 ; 257631 ; 257646 ;
Abstract
A multi-layer structure inserted onto an interface between a compound semiconductor region and a highly resistive material region includes an epitaxial silicon layer up to 1.5 nm thick in contact with the compound semiconductor region and an amorphous silicon layer from 1 to 10 nm thick in contact with the highly resistive material region and laminated on the epitaxial silicon layer.
Miyoshi, Yosuke. (1999). Compound semiconductor device having a multilayer silicon structure (U.S. Patent No. 5942792). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5942792
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile