The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1999
Filed:
Jul. 29, 1997
Applicant:
Inventor:
Takenori Morikawa, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257459 ; 257461 ; 257463 ;
Abstract
A photodetector provides high photo-sensitivity, a low resistance of a cathode circuit and quick photoresponse, and includes a light absorption layer in a cavity, which is formed in a N-Si epitaxial layer and surrounded by a side wall oxide layer. A N-Si diffusion layer is formed on the bottom and the side wall around the cavity and has a lower resistance than the epitaxial layer. The diffusion layer contacts a cathode take-out region so that the resistance of the cathode circuit is decreased.
Morikawa, Takenori. (1999). Photodetector and method for fabricating same (U.S. Patent No. 5942789). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5942789
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile