The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1999
Filed:
Mar. 30, 1998
Philip Raymond Boudjouk, Fargo, ND (US);
Beon-Kyu Kim, Fargo, ND (US);
Michael Perry Remington, Fargo, ND (US);
Bhanu Chauhan, Fargo, ND (US);
North Dakota State University Research Foundation, Fargo, ND (US);
Abstract
Compounds containing a tetradecachlorocyclohexasilane dianion are prepared by contacting trichlorosilane with a reagent composition comprising a tertiary polyamine. The compound �pedeta.SiH.sub.2 Cl.sup.+1 !.sub.2 �Si.sub.6 Cl.sub.14.sup.-2 ! wherein pedeta is N,N,N',N',N'-pentaethyldiethylenetriamine is prepared by contacting trichlorosilane with pedeta. The compound �Ph.sub.4 P.sup.+1 !.sub.2 �Si.sub.6 Cl.sub.14.sup.-2 ! is prepared by contacting trichlorosilane with a mixture of N,N,N',N'-tetraethylethylenediamine and triphenylphosphonium chloride. The tetradecachlorocyclohexasilane dianion can be chemically reduced to cyclohexasilane, a compound useful in the deposition of amorphous silicon films. The tetradecachlorcyclohexasilane dianion can also be contacted with a Grignard reagent to form a dodecaorganocyclohexasilane.