The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1999
Filed:
Apr. 10, 1997
Shinichi Miyakuni, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A wafer on which a GaAs layer is disposed on an Al.sub.x Ga.sub.1-x As (0<x.ltoreq.1) layer. An etching mask is formed on the GaAs layer. An etching gas containing chlorine, oxygen, and nitrogen is fed into a reaction chamber to generate a plasma having a plasma density of 10.sup.10 cm.sup.-3 or more, and the GaAs layer is etched using the Al.sub.x Ga.sub.1-x As layer of the wafer as an etching stop layer. This selective etching method is applied to formation of a gate recess structure in a compound semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile