The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1999
Filed:
Mar. 05, 1996
In Sool Chung, Kyoungki-do, KR;
Young Tag Woo, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Abstract
A method for fabricating a metal oxide semiconductor field effect transistor wherein source/drain junctions are formed by depositing and etching an oxide film having a desired thickness prior to the formation of a pocket region carried out by a pocket ion implantation after forming a gate oxide film and gate electrode on a channel region formed by implanting impurity ions in a silicon substrate. The pocket region is formed by impurity ions in source/drain regions exposed by etching the oxide film. Accordingly, it is possible to reduce the thermal budget applied to the source/drain junctions. As a result, the lateral diffusion of the impurity ions implanted in the source/drain junctions can be suppressed as much as possible. That is, the transistor fabricated in accordance with the present invention has a channel length longer than that obtained in accordance with the prior art. Accordingly, the transistor can have a highly compact or densely integrated size. Since source/drain electrodes are separately formed from each other in accordance with the present invention, the insulation between the source/drain electrodes can be effectively obtained.