The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1999
Filed:
Jul. 31, 1996
Applicant:
Inventors:
Masashige Aoyama, Oizumi-machi, JP;
Kazuhiro Yoshitake, Ota, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438275 ; 438287 ; 438305 ; 257500 ;
Abstract
A method for the production of a semiconductor integrated circuit device is disclosed, wherein the formation of lateral wall spacers for high voltage MOS transistor is implemented by forming a resist film for covering at least an insulating film formed on a drain region of low impurity concentration in the proximity of a gate electrode, masking the resist film, and etching the parts of the insulating film destined to give rise to the lateral wall spacers.