The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1999
Filed:
Nov. 28, 1995
Masato Sakao, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a method for forming a capacitor in a semiconductor device, an insulating film is formed on a semiconductor substrate, and an opening is formed through the insulating film. Then, a conductive film is formed to cover a side wall surface of the opening and an upper surface of the insulating film, and a whole surface is mechanically ground so as to selectively remove the conductive film on the upper surface of the insulating film so that the conductive film remains only in an inside of the opening. The remaining insulating film is removed so that a cylindrical electrode is formed of an upstanding remaining conductive film having the same height as the thickness of the removed insulating film.