Process of fabricating semiconductor device

Abstract

A process of fabricating a semiconductor device, includes the steps of: forming a side wall insulating film on a side portion of a gate electrode formed on a silicon substrate; forming a source/drain region in the silicon substrate, and subjecting the source/drain region to an activating heat treatment; forming a metal film on the surface of the source/drain region, and making the metal film react with the silicon substrate by a heat treatment thereby forming a silicide layer; wherein a first furnace heat treatment is performed after formation of the side wall insulating film and before formation the source/drain region; and an oxide film formed on the surface of the silicon substrate is removed before formation of the metal film, a surface side of the silicon substrate is made amorphous by doping ions of arsenic into the silicon substrate, and the metal film is formed.