The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1999
Filed:
Sep. 30, 1997
Applicant:
Inventors:
Hyung Mo Yoo, San Jose, CA (US);
Xuan Nguyen, Kyung, KR;
Assignee:
Samsung Electronics Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438182 ; 438577 ; 438579 ;
Abstract
An improved method for forming a T-gate structure in a MESFET includes dielectric lift-off steps.
Quick Actions:
Yoo, Hyung. (1999). T-gate mesfet process using dielectric film lift-off technique (U.S. Patent No. 5940697). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5940697
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile