The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1999
Filed:
Sep. 17, 1997
Electronics and Telecommunications Research Institute, Taejon-shi, KR;
Abstract
The present invention discloses a technique for applying diffraction characteristics of electrons to a two-dimensional electronic device to manufacture multi-functional transistor having various ON/OFF states. Method of manufacturing a quantum diffraction transistor according to the present invention is capable of adjusting the amplitude of drain current and having various ON/OFF states utilizing diffraction characteristics of electrons by interposing a reflection-type diffraction grating in a bent electron path. In the inventive multi-functional quantum diffraction transistor using a two dimensional electron gas in quantum well structure formed at a different species junction in a heterostructure semiconductor device and having a bent electron path between the source electrode and the drain electrode with a reflection-type diffraction grating, the quantum diffraction effect of the electrons is used for the control of the diffracted drain current.