The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1999
Filed:
Oct. 28, 1996
Applicant:
Inventors:
Andrew H Loomis, Chelmsford, MA (US);
James A Gregory, Sudbury, MA (US);
Eugene D Savoye, Concord, MA (US);
Bernard B Kosicki, Acton, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438 60 ; 438928 ;
Abstract
The wafer thickness of a CCD front illuminated silicon wafer is reduced to about ten to twenty microns, the Al substrate is removed and a 5-35 nanometer silicon oxide layer is produced on the thinned back of the silicon wafer followed by implanting boron ions within the back surface to a depth up to about ten nanometers. Furnace annealing the wafer is now carried out, and the Al substrate is redeposited to enable the formation of gate contacts.