The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 1999

Filed:

Nov. 22, 1996
Applicant:
Inventor:

Henry Shields, San Diego, CA (US);

Assignee:

JMAR Technology Co., San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 22 ; 372 23 ; 372-5 ; 372 20 ;
Abstract

A solid state laser systems for generating highly monochromatic laser radiation at wavelengths of interest for advanced micro-lithography, particularly 248 nanometer and 193 nanometer wavelengths. At least one Nd:YAG laser produces a 1,064 nm laser beam consisting of narrow-linewidth pulses of infra-red laser radiation having a pulse duration of less than 30 nanoseconds, at a pulse rate preferably in excess of 500 pulses per second with pulse energy greater than 20 millijoules. This radiation is frequency doubled and frequency tripled to produce 532 nm and 355 nm pulsed laser beams. These beams are then further optically processed to generate the ultra-violet wavelength for micro-lithography at either 248 nm or 193 nm.


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