The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1999
Filed:
Apr. 01, 1998
Applicant:
Inventors:
Min-Hwa Chi, Palo Alto, CA (US);
Albert Bergemont, Palo Alto, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518527 ; 36518518 ; 36518529 ; 257314 ; 257319 ;
Abstract
A single-poly EPROM cell, which has spaced-apart regions of opposite conductivity formed in the base region and a thin layer of tunnel oxide, is formed in a triple-well CMOS-compatible process. By utilizing a triple-well structure and a thin layer of tunnel oxide, the cell of the present invention is both electrically programmable and erasable in a low-voltage, i.e., +3.3V environment.
Quick Actions:
Chi, Min-Hwa. (1999). Single-poly eeprom cell that is programmable and erasable in a (U.S. Patent No. 5940324). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5940324
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile