The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1999
Filed:
May. 23, 1997
Satoshi Arima, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
First and second gate electrodes are formed spaced from each other on a semiconductor substrate. A pair of impurity diffusion layers are provided on both sides of the first gate electrode at the surface of the semiconductor substrate. The first gate electrode includes a first lower conductive film, a first protective conductive film provided on the first lower conductive film, and a first upper conductive film provided on the first protective conductive film. The second gate electrode includes a second lower conductive film, a second protective conductive film provided on the second lower conductive film, and a second upper conductive film provided on the second protective conductive film. The second upper conductive film extends to be in contact with one of the pair of impurity diffusion layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile