The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1999
Filed:
Feb. 10, 1997
Aristides A Yiannoulos, Wyomissing Hills, PA (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
A field-effect photo-transistor, being a three-terminal photosensing electrical device, based on integrated metal oxide semiconductor (MOS) technology. The device features a high output impedance which makes it particularly suitable as a photosensor for active pixel imaging arrays. Unlike the bipolar photo-transistor, which is a device well known in the art, the field-effect phototransistor is more compatible with MOS VLSI (Very Large Scale Integration) technology by inherently being a unipolar type device. Active pixel imaging arrays based on the disclosed invention can be integrated on the same semiconductor substrate with conventional digital or mixed signal processing functions to produce single-chip image processors for video or still picture cameras.