The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
Jun. 20, 1997
Toshiba Ceramics Co., Ltd., Tokyo, JP;
Abstract
The present invention is a SiC member and fabrication method thereof useful for heat treating semiconductors, wherein at least the surface of the member comprises: CVD-.beta.-phase SiC columnar crystals grown in perpendicular to the surface of the member; and CVD-.alpha.-phase SiC crystals grown up from interface of CVD-.beta.-phase columnar crystals. This structure thereby makes it possible to reduce the infrared ray transmittance of the heat treatment member and facilitates the heating of the heat treatment member by absorbing the infrared rays. Absorption of the IR rays results in favorable the temperature follow-up characteristics during the heat treatment of a semiconductor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile