The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
Oct. 16, 1997
NEC Corporation, , JP;
Abstract
A polysilicon film is deposited on a semiconductor substrate. A PSG film that can be removed from a material that composes field oxide films and sidewalls of a side surface portion of a gate electrode with a satisfactory selective ratio is deposited on the resultant semiconductor substrate. After the deposited films are processed as a gate electrode, the sidewalls are formed on the side surface portion of the gate electrode. Thereafter, the PSG film is selectively removed and the front surface of the polysilicon film, which composes the gate electrode, is exposed. Tungsten films are deposited on the front surfaces of the polysilicon film and source and drain region formed on the semiconductor substrate. After the SiON film is formed on the resultant semiconductor substrate, contact holes and then contacts are formed on the SiON film.