The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
Dec. 22, 1995
Applicant:
Inventors:
Takuya Fujii, Kawasaki, JP;
Mitsuru Ekawa, Kawasaki, JP;
Tsuyoshi Yamamoto, Kawasaki, JP;
Hirohiko Kobayashi, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438 46 ; 438796 ; 438 37 ; 438925 ; 438493 ; 438933 ; 438680 ; 438935 ;
Abstract
A fabricating method of compound semiconductor device is proposed which has a step of varying selective growth ratio of crystal by changing either a mean free path of material gas in gas atmosphere for use in crystal growth or a thickness of a stagnant layer of the material gas, using selective growth mask having opening portion consisting of first region having a narrow width and second region having a wide width.