The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
Mar. 31, 1998
William Charles Dunn, Mesa, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A Magnetoresistive Random Access Memory (MRAM) device (10) and a method for manufacturing the MRAM device (10). The MRAM device (10) has a plurality of pairs of sense lines (21A, 21B, 22A, 22B, 23A, 23B, 24A, 24B), a plurality of pairs of memory cells (51A, 51B), and a plurality of word lines (31, 32, 33, 34). For two adjacent sense lines (21A, 22A), a first end of the first sense line (21A) is placed adjacent to a second end of the second sense line (22A) and a second end of the first sense line (21A) is placed adjacent to a first end of the second sense line (22A). Decoding transistors (82, 83, 84, 85, 86, 87, 88, 89) are connected to the second ends of the plurality of pairs of sense lines (21A, 21B, 22A, 22B, 23A, 23B, 24A, 24B).