The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
Feb. 27, 1996
Masahiro Ito, Tokyo, JP;
Susumu Ohi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A gate electrode is disposed on a transparent insulating substrate, a gate wiring is connected to the gate electrode, and source and drain electrodes are disposed on a semiconductor thin film which is disposed on the gate electrode interposing an insulating film formed on the gate electrode, thereby forming a thin film transistor. In an active matrix type liquid crystal display device using this thin film transistor, a transparent pixel electrode connected to the source electrode is formed on the insulating film, and in a region where a drain wiring is adjacent to the transparent pixel electrode, the drain wiring is disposed under the insulating film on which the transparent pixel electrode is formed, whereby a lateral direction electric field caused by the drain wiring is reduced and reverse tilt region due to the lateral direction electric field is narrowed. Therefore, a penetration of a disinclination to the transparent pixel electrode is controlled so that an increase in an opening ratio can be achieved.