The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
Jun. 01, 1993
Kuntal Joardar, Chandler, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A laterally formed bipolar transistor receives independent base biasing at a base terminal and gate biasing at a gate terminal for providing high forward current gain and improved frequency response. The collector and emitter are formed with a first conductivity type and disposed in a well having a second conductivity type. The gate of the lateral transistor is formed adjacent to the well between the collector and emitter and receives the gate bias. The base of the lateral transistor is formed adjacent to the well and receiving the base bias. The combination of independent base and gate biasing provides more mobile carries to improve the forward current gain and frequency response of the lateral transistor while reducing its overall area.