The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
Mar. 24, 1997
Applicant:
Inventors:
Kazuhiro Sasada, Hashima, JP;
Mamoru Arimoto, Ogaki, JP;
Hideharu Nagasawa, Takatsuki, JP;
Atsuhiro Nishida, Ogaki, JP;
Hiroyuki Aoe, Joyo, JP;
Yosifumi Matusita, Bisai, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257632 ; 257640 ; 257641 ; 257649 ; 438791 ;
Abstract
A pair of source/drain regions are formed on a semiconductor substrate at a predetermined interval. A gate insulator film is formed on the semiconductor substrate between the source/drain regions of the pair. A gate electrode is formed on the gate insulator film. A film for covering the gate electrode and the source/drain regions has a low permeability against water and a hydroxide group, and has a thickness greater than 3 nm and less than 5 nm.